RESUMEN
OBJECTIVE: Patient perceptions of physician trust and respect are important factors for patient satisfaction evaluations. However, perceptions are subjective by nature and can be affected by patient and physician demographic characteristics. We aim to determine the causal effect on patient-physician demographic concordance and patient perceptions of physician trust and respect in an emergency care setting. METHODS: We performed a causal effect analysis in an observational study setting. A near-real-time patient satisfaction survey was sent via telephone to patients within 72 h of discharge from an emergency department (ED). Patient-trust-physician (PTP) and physician-show-respect (PSR) scores were measured. Patient and physician demographics (age, gender, race, and ethnicity) were matched. Causal effect was analyzed to determine the direct effect of patient-physician demographic concordance on PTP/PSR scores. RESULTS: We enrolled 1815 patients. The treatment effect of patient-physician age concordance on PTP scores was -0.119 (p = 0.036). Other treatment effect of patient-physician demographic concordance on patient perception of physician trust and respect ranged from -0.02 to -0.2 (p > 0.05). CONCLUSION: Patient-physician age concordance may cause a negative effect on patient perception of physician trust. Otherwise, patient-physician demographic concordance has no effect on patient perceptions of physician trust and respect.
RESUMEN
Frequency dispersion in the accumulation region seen in multifrequency capacitance-voltage characterization, which is believed to be caused mainly by border traps, is a concerning issue in present-day devices. Because these traps are a fundamental property of oxides, their formation is expected to be affected to some extent by the parameters of oxide growth caused by atomic layer deposition (ALD). In this study, the effects of variation in two ALD conditions, deposition temperature and purge time, on the formation of near-interfacial oxide traps in the Al2O3 dielectric are examined. In addition to the evaluation of these border traps, the most commonly examined electrical traps-i.e., interface traps-are also investigated along with the hysteresis, permittivity, reliability, and leakage current. The results reveal that a higher deposition temperature helps to minimize the formation of border traps and suppress leakage current but adversely affects the oxide/semiconductor interface and the permittivity of the deposited film. In contrast, a longer purge time provides a high-quality atomic-layer-deposited film which has fewer electrical traps and reasonable values of permittivity and breakdown voltage. These findings indicate that a moderate ALD temperature along with a sufficiently long purge time will provide an oxide film with fewer electrical traps, a reasonable permittivity, and a low leakage current.
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This study represents a comparison of the border trap behavior and reliability between HfO2 and ZrO2 films on n-In0.53Ga0.47As with an Al2O3 interfacial layer. The effect of different post metal annealing conditions on the trap response was analyzed and it was found that the N2:H2 mixed FGA passivates the border trap quite well, whereas N2-based RTA performs better on interface traps. Al2O3/HfO2 showed more degradation in terms of the threshold voltage shift while Al2O3/ZrO2 showed higher leakage current behavior. Moreover, Al2O3/ZrO2 showed a higher permittivity, hysteresis, and breakdown field than Al2O3/HfO2.
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This study presents a model to calculate the border trap density (Nbt) of atomic layer deposition high-k onto In0.53Ga0.47As on a 300-mm (001) Si substrate. This model considers the quantum confinement effect and band nonparabolicity. Capacitance-equivalent thickness (CET) was used to reflect the distance of the charge centroid from the oxide-semiconductor interface. The border trap values based on CET were found to be approximately 65% lower than the extracted values based on physical thickness in the In0.53Ga0.47As material. In an investigation of two different post-metal annealing effects on border traps, the border trap was more effectively passivated by N2-based forming gas annealing (FGA) compared with rapid thermal annealing (RTA), whereas a lower interface state density was observed in RTA-annealed samples compared with FGA-annealed samples. Nbt extraction at different bias voltages demonstrated that the applied frequencies travel deep into the oxide and interact with more traps as more the Fermi level passes the conduction band, thus creating tunneling with the carriers.
RESUMEN
This study presents the characteristics of HfAlO films for a series of Al incorporation ratios into a HfO2 dielectric by atomic layer deposition on a Si substrate. A small amount of Al doping into the HfO2 film can stabilize the tetragonal phase of the HfO2, which helps to achieve a higher dielectric constant (k) and lower leakage current density, as well as a higher breakdown voltage than HfO2 film on its own. Moreover, assimilation of Al2O3 into HfO2 can reduce the hysteresis width and frequency dispersion. These are indications of border trap reduction, which was also verified by the border trap extraction mechanism. X-ray photoelectron spectroscopy (XPS) analysis also verified the HfAlO microstructural properties for various Al compositions. In addition, higher amounts of Al2O3 in HfAlO resulted in better interface and dielectric behavior through trap minimization, although the equivalent-oxide-thickness (EOT) values show the opposite trend.
